Depletion-Mode Amorphous Silicon Thin Film Transistor and Its Application to Organic Light Emitting Diodes

概要

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We have developed a depletion-mode amorphous silicon (a-Si) thin film transistor by insertion of n-type a-Si in the channel. The threshold voltage ($V_{\text{th}}$) is controlled by the thickness or doping ratio of the inserted doped layer. The $V_{\text{th}}$ of depletion-mode a-Si:H thin film transistor (TFT) can be moved to have negative value so that the drain current can flow at zero gate bias. The depletion mode a-Si TFT is applied to the driving transistor of active matrix organic light emitting diodes (AMOLED), which shows more stable drain current under prolonged gate bias stress compared to normal transistor.
2009-03-25