Fabrication of Short-Channel Thin-Film Transistor Using Conventional Photolithography

概要

論文の詳細を見る
Hydrogenated amorphous silicon thin-film transistors (TFTs) with channel length below 4 μm, were successfully fabricated using a new half-tone exposure technique combined with conventional photolithography. A concept of asymmetric double-slit design was applied to decrease channel length ($L$). TFTs having a channel length down to 3 μm was successfully fabricated, and showed better output capability with minor changes in mobility and off-state current.
2009-03-25