Study of Super-Resolution Read-Only-Memory Disk with a Semiconducting or Chalcogenide Mask Layer

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概要

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• Super-resolution read-only-memory (ROM) disks were manufactured with a semiconductor material (InSb) or a phase change material (AgInSbTe, AIST). A reasonable carrier-to-noise ratio (CNR) of 40 dBm was measured on a single-tone pattern with 80 nm pits for both materials. On a random pattern with RLL(1,9) (RLL: run-length limited) encoding and a channel bit length of 40 nm, a bit error rate (bER) of $10^{-3}$ was found for the InSb-based disk. However, the pattern was impossible to be decoded for the AIST-based disk. This is due to the unexpected reflectivity modulation that occurs when 2T marks are read out.

• 2009-03-25

著者

• Hoelzemann Herbert

  Deutsche Thomson OHG, Hermann-Schwer-Strasse 3, 78048 Villingen-Schwenningen, Germany

• Knappmann Stephan

  Deutsche Thomson OHG, Hermann-Schwer-Strasse 3, 78048 Villingen-Schwenningen, Germany

• Pilard Gael

  Deutsche Thomson OHG, Hermann-Schwer-Strasse 3, 78048 Villingen-Schwenningen, Germany

• Fery Christophe

  Deutsche Thomson OHG, Hermann-Schwer-Strasse 3, 78048 Villingen-Schwenningen, Germany

• Pacearescu Larisa

  Deutsche Thomson OHG, Hermann-Schwer-Strasse 3, 78048 Villingen-Schwenningen, Germany

関連論文

• Study of Super-Resolution Read-Only-Memory Disk with a Semiconducting or Chalcogenide Mask Layer
• Turbo Equalization of Run Length Limited $(1,9)$ and Low Density Parity Check Code for Super Resolution Nearfield Structure Read Only Memory Discs with 60 nm Minimum Mark Length

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