Enhancement of Dopant Activation in B-Implanted Diamond by High-Temperature Annealing

概要

論文の詳細を見る
In this paper, we present the effect of postimplantation high-temperature annealing at 1600 °C on electrical properties and lattice structures of B-implanted diamonds. B multiple ion implantation at 30–360 keV was performed to make a B box-profile of $5 \times 10^{18}$ or $5 \times 10^{19}$ cm-3 into high-pressure, high-temperature type IIa diamond substrates at 400 °C, followed by 1450 °C and higher temperature annealing at 1600 °C. Optical transmission spectra indicated that radiation damage was almost eliminated with an increase in annealing temperatures to 1600 °C in both samples. In the sample of $5 \times 10^{18}$ cm-3, the hole concentration and the Hall mobility were $2 \times 10^{13}$ cm-3 and 55 cm2 V-1 s-1 after 1450 °C annealing, respectively. By contrast, after 1600 °C annealing, their values increased to $6.5 \times 10^{13}$ cm-3 and 82 cm2 V-1 s-1, respectively. The doping efficiency of the sample after 1600 °C annealing is ${\sim}50$%, which is the highest ever reported for B-implanted diamond. In the sample of $5 \times 10^{19}$ cm-3, the band conduction of carriers was observed after 1450 °C annealing, while high-temperature annealing at 1600 °C resulted in the appearance of hopping conduction in the low-temperature region below 400 K. In cathodoluminescence spectra of the samples annealed at 1600 °C, the peak intensities around 780 nm, originating from radiation defects frequently observed in ion implanted diamond, decreased, while a broad band centering around 560 nm appeared. The results of this study suggest that high-temperature annealing over 1450 °C is effective for elimination of radiation damage and an increase in the acceptor concentration.
2008-09-25

Enhancement of Dopant Activation in B-Implanted Diamond by High-Temperature Annealing

スポンサーリンク

概要

著者

関連論文

スポンサーリンク