Suppression of the polarization dependence of the vertical photoluminescence from InAs/GaAs quantum dots by InGaAs strain-reducing layer

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概要

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• We report the linear polarization features of the vertical photoluminescence from InAs/GaAs self-assembled quantum dots (QDs) embedded in an InGaAs strain-reducing layer. The QD samples were grown by molecular beam epitaxy. We observed the polarization dependence of the vertical photoluminescence intensity that is expected to originate in the in-plane asymmetry of the QD structure. The polarization dependence of the photoluminescence intensity of the QDs was suppressed by increasing the indium composition and the thickness of the strain-reducing layer. We computed the electron wavefunction based on the three-dimensional finite element method to explain the results of the experiments. We found that the symmetry of the wavefunction in the embedded QD is superior to that of the crystallographic QD structure, and that the improvement is attributed to the asymmetric permeation of the wavefunction into the strain-reducing layer. These results will aid in the development of vertical-light-emitting QD devices such as surface-emitting lasers and entangled-photon generators.

• The Japan Society of Applied Physicsの論文
• 2008-06-25

著者

• Mukai Kohki

  Division of Materials Science and Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan

• Nakashima Kenta

  Division of Materials Science and Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan

関連論文

• Suppression of the polarization dependence of the vertical photoluminescence from InAs/GaAs quantum dots by InGaAs strain-reducing layer

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