Outgassing Quantification Analysis of Extreme Ultraviolet Resists
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概要
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Extreme ultraviolet (EUV) resist outgassing quantification analysis using the pressure rise method with a modified ideal gas equation is discussed. The use of the outgassing amounts based on the E0 and/or multiples of E0 is recommended as this information may be crucial in understanding the behavior of resist outgassing at various exposure or patterning doses. Furthermore, this method is effective in representing resist outgassing release mechanisms which were found to differ greatly depending on the resist formulation. Applying this method with quadrupole mass spectrometry (QMS), analysis of the resist outgassing obtained from a model poly(hydroxystyrene) (PHS) resist with varied quencher concentrations showed that the decrease and shift of the maximum pressure rise peak of the pressure rise curve as quencher concentration was increased was found to be due to the suppression of photo acid production which, in effect controls the amount of protecting group released as resist outgassing.
- 2008-06-25
著者
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Kobayashi Shinji
Mirai‐semiconductor Leading Edge Technol. Inc. Ibaraki Jpn
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Santillan Julius
MIRAI-Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Itani Toshiro
MIRAI-Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Kobayashi Shinji
MIRAI-Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
関連論文
- Analysis of outgassing from EUV resists
- Extreme Ultraviolet Resist Outgassing Quantification Verification by Resist Film Analysis
- Outgassing Quantification Analysis of Extreme Ultraviolet Resists