Vacuum and Air Annealing Effects on Properties of Indium Tin Oxide Films Prepared by Ion-Assisted Electron Beam Evaporation

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概要

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• Indium tin oxide (ITO) films were deposited on glass substrates by ion-assisted electron beam evaporation, followed by annealing in vacuum and air at different temperatures from 200 to 350 °C with an interval of 50 °C for 1 h. The deposited films were analyzed by a four-point probe method, Hall effect measurement, an X-ray diffraction technique, spectrophotometry, and atomic force microscopy. Results show that the electrical resistivity of ITO films depends on annealing temperature. Its lowest value of $1.07 \times 10^{-4}$ $\Omega$ cm is obtained at an annealing temperature of 350 °C in vacuum. The optical transmittance of ITO films with a thickness of 500 nm for annealing in air is higher than that in vacuum. The optical band gap and grain size increase with increasing annealing temperature.

• 2008-06-25

著者

• LIMSUWAN Pichet

  Department of Physics, Faculty of Science, King Mongkut's University of Technology Thonburi

• Limsuwan Pichet

  Department of Physics, King Mongkut's University of Technology Thonburi, 126 Prachautid Rd., Bangmod, Tungkru, Bangkok 10140, Thailand

• Pokaipisit Artorn

  Department of Physics, King Mongkut's University of Technology Thonburi, 126 Prachautid Rd., Bangmod, Tungkru, Bangkok 10140, Thailand

• Horprathum Mati

  Photonics Technology Laboratory, National Electronics and Computer Technology Center, 112 Phahon Yothin Rd., Klong Luang, Pathumthani 12120, Thailand

関連論文

• Vacuum and Air Annealing Effects on Properties of Indium Tin Oxide Films Prepared by Ion-Assisted Electron Beam Evaporation

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