Reduction of Particle Contamination in Plasma-Etching Equipment by Dehydration of Chamber Wall

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概要

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• The mechanism of particle generation is investigated in order to prevent defects formed on wafers in the plasma etching of multi-layered films composed of tungsten silicide (WSi) and polycrystalline silicon (poly-Si). Particles are measured by an in situ monitoring system using laser light scattering during the etching process. The particles are composed of AlF3, which is presumably generated by reacting the coating material Al2O3 on the etching chamber wall with plasma containing fluorine atoms, F in the presence of H2O absorbed into the chamber parts and materials. We demonstrated successfully that dehydration of the chamber parts and materials by plasma discharge suppresses particle generation.

• 2008-05-25

著者

• Uesugi Fumihiko

  Test and Analysis Engineering Division, NEC Electronics Corp., Kawasaki 211-8668, Japan

• Matsumoto Masao

  Product Support Engineering, Lam Research Co., Ltd., Sagamihara, Kanagawa 229-1105, Japan

• Ito Natsuko

  Test and Analysis Engineering Division, NEC Electronics Corp., Kawasaki 211-8668, Japan

• Moriya Tsuyoshi

  Test and Analysis Engineering Division, NEC Electronics Corp., Kawasaki 211-8668, Japan

• Liu Shenjian

  Etch Product Support, Lam Research Corporation, Fremont, CA 94538, U.S.A.

• Kitayama Yoshihiko

  Product Support Engineering, Lam Research Co., Ltd., Sagamihara, Kanagawa 229-1105, Japan

関連論文

• Reduction of Particle Contamination in Plasma-Etching Equipment by Dehydration of Chamber Wall

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