Synethesis of VO2 Nanowire and Observation of Metal–Insulator Transition
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概要
- 論文の詳細を見る
We have fabricated crystalline nanowires of VO2 using vanadium metal deposition. A nanowire synthesized at 650 °C shows semiconducting behavior and a nanowire synthesized at 670 °C exhibits the first-order metal–insulator transition which is not the one-dimensional a property. The temperature coefficient of resistance in the semiconducting nanowire is 7.06%/K at 300 K, which is higher than that of a commercial bolometer.
- 2008-04-25
著者
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CHOI Sungyoul
IT-Convergence & Components Lab., Electronics and Tele-Communications Research Institute (ETRI)
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KIM Bong-Jun
IT-Convergence & Components Lab., Electronics and Tele-Communications Research Institute (ETRI)
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LEE Yong
IT-Convergence & Components Lab., Electronics and Tele-Communications Research Institute (ETRI)
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YUN Sun
IT-Convergence & Components Lab., Electronics and Tele-Communications Research Institute (ETRI)
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KIM Hyun-Tak
IT-Convergence & Components Lab., Electronics and Tele-Communications Research Institute (ETRI)
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Yun Sun
IT-Convergence and Components Lab., ETRI, 161 Gajung-dong, Yusong-gu, Daejeon 305-350, Korea
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Kim Bong-Jun
IT-Convergence and Components Lab., ETRI, 161 Gajung-dong, Yusong-gu, Daejeon 305-350, Korea
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Kim Hyun-Tak
IT-Convergence and Components Lab., ETRI, 161 Gajung-dong, Yusong-gu, Daejeon 305-350, Korea
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Lee Yong
IT-Convergence and Components Lab., ETRI, 161 Gajung-dong, Yusong-gu, Daejeon 305-350, Korea
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Choi Sungyoul
IT-Convergence and Components Lab., ETRI, 161 Gajung-dong, Yusong-gu, Daejeon 305-350, Korea
関連論文
- Synthesis of VO_2 Nanowire and Observation of the Metal-Insulator Transition
- Programmable VO_2 temperature sensor controlled by a constant voltage
- Synethesis of VO2 Nanowire and Observation of Metal–Insulator Transition