Properties of Methyl Boron Nitride Film for Next Generation Low-$k$ Interconnection
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概要
- 論文の詳細を見る
Low-dielectric-constant ($k$) materials for large-scale integration (LSI) interconnect insulators are required to meet the fast development of high-speed devices. Introducing nanopores into dielectrics reduces their $k$ effectively but also markedly degrades film strength (Young’s modulus). Developing a new low-$k$ material is important for a stable integration with multilevel interconnections. We have investigated a low-$k$ material of boron nitride containing methyl (methyl BN) using tris(dimethylamino)boron (TMAB) gas. This is the first report on the characteristics of a methyl BN film deposited using TMAB. We have succeeded in fabricating a low-$k$ material with $k < 2.1$ and Young’s modulus $>26$ GPa. Moreover, the film can easily be etched using CF4 gas. The methyl BN film as a low-$k$ material can readily be applicable to next-generation node technology devices.
- 2008-04-25
著者
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HARA Makoto
Division of Neurosurgery, Ichinomiya City Hospital
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Watanabe Daisuke
Division Of Dento-oral Anesthesiology Tohoku University Graduate School Of Dentistry
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Aoki Hidemitsu
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kimura Chiharu
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Mazumder Motaharu
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Tokuyama Shinji
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Sugino Takashi
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Hara Makoto
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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