Photocatalytic Lithography using Zinc Oxide Nanoislands

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概要

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• Resist-free photocatalytic lithography has been studied. We attempted to etch aluminum (Al) thin films in deionized water using zinc oxide (ZnO) nanoislands as the photocatalyst deposited on Al thin films by reactive RF magnetron sputtering. The etching samples (ZnO/Al/glass) were irradiated with UV light in deionized water. We measured Al concentration in deionized water after UV irradiation and calculated Al etching rate. It was found that Al can be etched using ZnO nanoislands as the photocatalyst in deionized water and that Al etching rates were from 0.28 to 0.53 nm/min. These values were on the atomic size order. The activation energy of reaction for Al etching by photocatalysis of ZnO was 31.32 kJ/mol. Al etching rate can be increased by adding hydrogen peroxide (H2O2) to deionized water.

• 2008-04-25

著者

• Imajo Tsukasa

  Takamatsu National College of Technology, 355 Chokushi-cho, Takamatsu 761-8058, Japan

• Okano Hiroshi

  Takamatsu National College of Technology, 355 Chokushi-cho, Takamatsu 761-8058, Japan

• Maeda Atsushi

  Osaka Prefectural College of Technology, 26-1, Saiwai-cho, Neyagawa, Osaka 572-8572, Japan

関連論文

• Photocatalytic Lithography using Zinc Oxide Nanoislands
• Propagation Characteristics of Surface Acoustic Waves on K3Li2Nb5O15

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