Enhancement of Secondary Grain Growth of Low-Temperature Polycrystalline Silicon by Visible Laser Irradiation: Visible-Laser-Induced Lateral Crystallization
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概要
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In this paper, we propose and investigate a new concept of visible-laser-induced lateral crystallization (VILC) for decreasing process temperature. Visible laser is irradiated onto a polycrystalline Si film before or after ultraviolet laser irradiation. Lateral growth is enhanced by laser heating at the grain boundary since the absorbance of the grain boundary is larger than that of the in-grain. The enhancement of secondary grain growth is discussed from the viewpoints of both the prolongation of the time of the thermal profile and the increase in temperature at the grain boundary.
- 2008-03-25
著者
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Ishikawa Hitoshi
Graduate School Of Engineering Hokkaido University
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Ueno Kiyoshi
Graduate School of Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
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Heya Akira
Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, Japan
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Kawamoto Naoya
Graduate School of Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
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Miyoshi Tadaki
Graduate School of Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
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Matsuo Naoto
Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, Japan
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Fujiwara Toshihisa
Graduate School of Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
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Ishikawa Hitoshi
Graduate School of Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
関連論文
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- Enhancement of Secondary Grain Growth of Low-Temperature Polycrystalline Silicon by Visible Laser Irradiation: Visible-Laser-Induced Lateral Crystallization