Optoelectronic Properties of Ge-Doped TiO2 Nanoparticles
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概要
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To study the interaction of Ge atoms with titania (TiO2) nanoparticles, we synthesized Ge-doped titania films by sol–gel method. The structural properties of Ge-doped titania films describe us that Ge ions (Ge4+) could be incorporated in the TiO2 lattice by substituting Ti ions (Ti4+). Introduction of Ge4+ makes a distortion in the TiO2 lattice. As a result, the optoelectronic properties of doped titania films change with the doping concentration of Ge.
- 2008-02-25
著者
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Chatterjee Amit
Center for Composite Materials, University of Delaware, Newark, DE 19716, U.S.A.
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Chatterjee Sukti
Center for Composite Materials, University of Delaware, Newark, DE 19716, U.S.A.