Self-Assembled $c$-Plane GaN Nanopillars on $\gamma$-LiAlO2 Substrate Grown by Plasma-Assisted Molecular-Beam Epitaxy
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概要
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We have grown $M$-plane GaN films with self-assembled $C$-plane GaN nanopillars on a $\gamma$-LiAlO2 substrate by plasma-assisted molecular-beam epitaxy. The diameters of the basal plane of the nanopillars are about 200 to 900 nm and the height is up to 600 nm. The formation of self-assembled $c$-plane GaN nanopillars is through nucleation on hexagonal anionic bases of $\gamma$-LiAlO2. Dislocation defects were observed and analyzed by transmission electron microscopy. From the experimental results, we developed a mechanism underlying the simultaneous growth of three-dimensional $c$-plane nanopillars and two-dimensional $M$-plane films on a $\gamma$-LiAlO2 substrate.
- 2008-02-25
著者
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Chiang Jih-chen
Department Of Physics National Sun Yat-sen University
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Chen Yen-liang
Department Of Electrical Engineering Tamkang University
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Hsieh Chia-Ho
Department of Physics, Institute of Material Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan 80424, Republic of China
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Gau Ming-Hong
Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
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Lo Ikai
Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
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Hsu Yu-Chi
Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
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Lo Ikai
Department of Physics, Institute of Material Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan 80424, Republic of China
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Gau Ming-Hong
Department of Physics, Institute of Material Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan 80424, Republic of China
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Chou Ming-Chi
Department of Physics, Institute of Material Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan 80424, Republic of China
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Pang Wen-Yuan
Department of Physics, Institute of Material Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan 80424, Republic of China
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Chang Yao-I
Department of Physics, Institute of Material Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan 80424, Republic of China
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Sham Meng-Wei
Department of Physics, Institute of Material Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan 80424, Republic of China
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Tsai Jenn-Kai
National Formosa University, Hu-Wei, Yun-Lin, Taiwan 63208, Republic of China
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Hsu Yu-Chi
Department of Physics, Institute of Material Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan 80424, Republic of China
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