Advances in Type-I GaSb Based Lasers

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概要

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• We show that high level of compressive strain in the optically active quantum wells is a key condition for efficient continuous-wave room-temperature operation of the type-I GaSb-based diode lasers. Lasers with two highly strained InGaAsSb quantum wells and AlGaAsSb barriers demonstrate an output CW power of 1050 mW at 2.4 μm and 85 mW at 3.1 μm.

• 2008-10-25

著者

• Kipshidze Gela

  Department Of Electrical And Computer Engineering And Nano Tech Center Texas Tech University

• Shterengas Leon

  Department of Electrical and Computer Engineering, SUNY at Stony Brook, NY 11794-2350, U.S.A.

• Belenky Gregory

  Department of Electrical and Computer Engineering, SUNY at Stony Brook, NY 11794-2350, U.S.A.

• Donetsky Dmitry

  Department of Electrical and Computer Engineering, SUNY at Stony Brook, NY 11794-2350, U.S.A.

• Kisin Mikhail

  Department of Electrical and Computer Engineering, SUNY at Stony Brook, NY 11794-2350, U.S.A.

関連論文

• Deep Ultraviolet Light Emitting Diodes Based on Short Period Superlattices of AlN/AlGa(In)N
• Advances in Type-I GaSb Based Lasers

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