Thin InSb films on GaAs substrates by Molecular Beam Epitaxy

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概要

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• We optimized the suitable growth conditions for obtaining smooth surface and high-quality InSb epilayer grown on semi-insulating GaAs substrate. The low temperature (LT) buffer layer was introduced into the growth process to improve the surface morphology and interface quality of the epilayers. It was confirmed that high quality InSb epilayer strongly depends on LT InSb buffer layer and growth conditions and parameters. Our typical InSb samples were obtained at the growth temperature of 420–425 °C, with the optimum Sb/In ratio of $1.4:1$, and in our experiments, the epilayer thickness was in the range of 1.0 to 2.2 μm. Typically, the room temperature X-ray diffraction (XRD) full width half maximum (FWHM) of 172$''$ and mobility of 64300 cm2 V-1 S-1 at 77 K were obtained for typical sample of 2.2 μm thickness.

• 2008-01-25

著者

• Wang Yong

  Changchun University of Science and Technology, Changchun 130022, P.R. China

• Li Mei

  Changchun University of Science and Technology, Changchun 130022, P.R. China

• Li Zhanguo

  Changchun University of Science and Technology, Changchun 130022, P.R. China

• Liu Guojun

  Changchun University of Science and Technology, Changchun 130022, P.R. China

• You Minghui

  Changchun University of Science and Technology, Changchun 130022, P.R. China

• Li Lin

  Changchun University of Science and Technology, Changchun 130022, P.R. China

• Xiong Min

  Changchun University of Science and Technology, Changchun 130022, P.R. China

• Zhang Baoshun

  Changchun University of Science and Technology, Changchun 130022, P.R. China

• Wang Xiaohua

  Changchun University of Science and Technology, Changchun 130022, P.R. China

関連論文

• Thin InSb films on GaAs substrates by Molecular Beam Epitaxy

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