Characteristics of Gallium-Doped Zinc Oxide Thin-Film Transistors Fabricated at Room Temperature Using Radio Frequency Magnetron Sputtering Method

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概要

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• In this paper, we present bottom-gate-type Ga-doped zinc oxide (GZO) thin-film transistors (TFTs) using a certain conventional SiO2 gate insulator by applying a radio-frequency (RF) magnetron sputtering method at room temperature. A low gate leakage current was achieved using this conventional SiO2 gate insulator instead of new gate oxide materials. The root mean square (RMS) value of the GZO film surface was found to be 1.65 nm, and the transmittance was higher than 75% in the visible region. The GZO TFTs operated in a depletion mode with a threshold voltage of $-3.4$ V. A mobility of 0.023 cm2/(V$\cdot$s), an on/off ratio of $2\times 10^{3}$, and a gate voltage swing of 3.3 V/decade were obtained. We successfully demonstrated that the TFT of depletion-mode type can be fabricated using a GZO film that has good surface uniformity, transparency, and electrical characteristics.

• 2008-01-25

著者

• Verma Ved

  Department of Mechanical & Materials Engineering, Florida International University, 10555 W. Flagler St., Miami, FL 33174, U.S.A.

• Kim Do-Hyun

  Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, 607 Obang-dong, Gimhae, Gyeongnam 621-749, Korea

• Jeon Hoonha

  Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, 607 Obang-dong, Gimhae, Gyeongnam 621-749, Korea

• Hwang Sookhyun

  Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, 607 Obang-dong, Gimhae, Gyeongnam 621-749, Korea

• Lee Sooyeon

  Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, 607 Obang-dong, Gimhae, Gyeongnam 621-749, Korea

• Park Chiyoung

  Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, 607 Obang-dong, Gimhae, Gyeongnam 621-749, Korea

• Choi Wonbong

  Department of Mechanical & Materials Engineering, Florida International University, 10555 W. Flagler St., Miami, FL 33174, U.S.A.

• Jeon Minhyon

  Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, 607 Obang-dong, Gimhae, Gyeongnam 621-749, Korea

• Choi Wonbong

  Department of Mechanical & Materials Engineering, Florida International University, 10555 W. Flagler St., Miami, FL 33174, U.S.A.

関連論文

• Characteristics of Gallium-Doped Zinc Oxide Thin-Film Transistors Fabricated at Room Temperature Using Radio Frequency Magnetron Sputtering Method

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