Characteristics of ZnO Thin Films Prepared by Acidic Sol Method

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概要

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• Zinc oxide (ZnO) thin films are grown using an acidic sol by dip coating. The acidic sol is prepared from a methanolic solution of zinc chloride using formic acid (HCOOH) as the stabilizer and poly(vinyl acetate) (PVAc) as the tackifier. Crystalline ZnO thin films are obtained following annealing at 480 °C for 1 h. The effects of dip-coating conditions on the microstructure and optical properties of the ZnO thin films are investigated using a variety of analytical tools. Field emission scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM) show that fine ZnO crystallites comprise the bottom layer of the films, and large crystallites emerge on the surface of the fine crystallite layer. Selected area diffraction (SAD) patterns indicate that both the fine and large crystallites exhibit a hexagonal wurtzite crystal structure. The particle size distribution of the bottom fine crystallites is below 20 nm, while that of the large crystallites varies from 500 to 800 nm, depending on the number of dip-coating times. The ZnO films have an absorption edge that starts at approximately 370 nm and cuts off at 290 nm. As calculated from the absorption edge, the ZnO films have optical gaps of about 4.02–4.11 eV.

• 2007-08-15

著者

• Shieu Fuh-sheng

  Department Of Materials Engineering National Chung Hsing University

• Yao Hsiao-Chiang

  Department of Materials Engineering, National Chung Hsing University, Taichung 402, Taiwan

• Shieu Fuh-Sheng

  Department of Materials Engineering, National Chung Hsing University, Taichung 402, Taiwan

• Huang Chueh-Jung

  Department of Chemical Engineering and Biotechnology, Hsiuping Institute of Technology, Taichung 412, Taiwan

• Chiu Ming-Chieh

  R&D Technology Center, Hi-Cap Department, Yageo Corporation Nantz Branch, Kaohsiung 811, Taiwan

• Chiu Ming-Chieh

  R&D Technology Center, Hi-Cap Department, Yageo Corporation Nantz Branch, Kaohsiung 811, Taiwan

• Yu Ruei-Sung

  Department of Materials Engineering, National Chung Hsing University, Taichung 402, Taiwan

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