C-Band GaN-Based Field-Effect-Transistor Power Amplifiers with 170-W Output Power
スポンサーリンク
概要
- 論文の詳細を見る
A C-band high-power amplifier is successfully developed with two-chip 24-mm-wide GaN-based field effect transistors (FET). At 5.0 GHz, the fabricated GaN-FET amplifier delivers a 171 W cw output power with 11 dB linear gain and 38% power-added efficiency with a drain voltage of 50 V. To the best of our knowledge, this is the highest cw output power achieved from a solid-state power amplifier at C-band.
- 2007-04-30
著者
-
Wakejima Akio
R&D Association for Future Electron Devices, c/o System Devices Research Laboratories, NEC Corporation, 2-9-1 Seiran, Otsu 520-0833, Japan
-
Okamoto Yasuhiro
R&D Association for Future Electron Devices, c/o System Devices Research Laboratories, NEC Corporation, 2-9-1 Seiran, Otsu 520-0833, Japan
-
Ando Yuji
R&D Association for Future Electron Devices, c/o System Devices Research Laboratories, NEC Corporation, 2-9-1 Seiran, Otsu 520-0833, Japan
-
Nakayama Tatsuo
R&D Association for Future Electron Devices, c/o System Devices Research Laboratories, NEC Corporation, 2-9-1 Seiran, Otsu 520-0833, Japan
-
Wakejima Akio
R&D Association for Future Electron Devices, c/o System Devices Research Laboratories, NEC Corporation, 2-9-1 Seiran, Otsu 520-0833, Japan
-
Matsunaga Kohji
R&D Association for Future Electron Devices, c/o System Devices Research Laboratories, NEC Corporation, 2-9-1 Seiran, Otsu 520-0833, Japan
-
Ota Kazuki
R&D Association for Future Electron Devices, c/o System Devices Research Laboratories, NEC Corporation, 2-9-1 Seiran, Otsu 520-0833, Japan
-
Miyamoto Hironobu
R&D Association for Future Electron Devices, c/o System Devices Research Laboratories, NEC Corporation, 2-9-1 Seiran, Otsu 520-0833, Japan
-
Matsunaga Kohji
R&D Association for Future Electron Devices, c/o System Devices Research Laboratories, NEC Corporation, 2-9-1 Seiran, Otsu 520-0833, Japan
-
Okamoto Yasuhiro
R&D Association for Future Electron Devices, c/o System Devices Research Laboratories, NEC Corporation, 2-9-1 Seiran, Otsu 520-0833, Japan
-
Ota Kazuki
R&D Association for Future Electron Devices, c/o System Devices Research Laboratories, NEC Corporation, 2-9-1 Seiran, Otsu 520-0833, Japan
-
Ando Yuji
R&D Association for Future Electron Devices, c/o System Devices Research Laboratories, NEC Corporation, 2-9-1 Seiran, Otsu 520-0833, Japan
-
Miyamoto Hironobu
R&D Association for Future Electron Devices, c/o System Devices Research Laboratories, NEC Corporation, 2-9-1 Seiran, Otsu 520-0833, Japan