Theory of Short-Channel Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect-Transistors

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概要

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• A model for a metal–oxide–semiconductor field-effect-transistor (MOSFET) with a surrounding gate (SG) is developed. Analytical solutions to the model are obtained by solving Poisson’s equation using series expansion. Taking short-channel effects into account, the analytical expressions for electric potential, electric field, and threshold voltage are obtained. It is found that the transistor is fully depleted for a small radius, and the threshold voltage increases as the radius increases or as the oxide capacitance per unit area decreases.

• 2007-04-15

著者

• Ding Shi-jin

  Asic And System State Key Lab Platform Of Micro/nano-electronics Fudan University

• Tang Ting-ao

  Asic And System State Key Lab Platform Of Micro/nano-electronics Fudan University

• Tang Ting-Ao

  ASIC and System State Key Lab, Platform of Micro/Nano-Electronics, Fudan University, Shanghai 200433, P. R. China

• Wang Ling-Li

  ASIC and System State Key Lab, Platform of Micro/Nano-Electronics, Fudan University, Shanghai 200433, P. R. China

• Hu Guang-Xi

  ASIC and System State Key Lab, Platform of Micro/Nano-Electronics, Fudan University, Shanghai 200433, P. R. China

• Liu Ran

  ASIC and System State Key Lab, Platform of Micro/Nano-Electronics, Fudan University, Shanghai 200433, P. R. China

• Ding Shi-Jin

  ASIC and System State Key Lab, Platform of Micro/Nano-Electronics, Fudan University, Shanghai 200433, P. R. China

関連論文

• Analytical Model for Subthreshold Swing and Threshold Voltage of Surrounding Gate Metal--Oxide--Semiconductor Field-Effect Transistors
• Theory of Short-Channel Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect-Transistors

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