Growth and Optical Properties of (KNa)0.1(Sr0.61Ba0.39)0.9Nb2O6 Thin Films by Pulsed Laser Deposition
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概要
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Epitaxial (KNa)0.1Sr0.61Ba0.39)0.9Nb2O6 (KNSBN:61) thin films deposited on MgO(100) substrates have been prepared by pulsed laser deposition (PLD). The structural properties of the thin films have been examined by X-ray diffraction analysis. An X-ray diffraction $2\theta$ scan indicates single crystalline layers with the (001) orientation perpendicular to the substrate plane. The optical transmission spectra of the thin films have been obtained in the spectral range of 200–900 nm, and their optical constants (refractive index $n$ and extinction coefficient $k$) have been determined. It has been found that the refractive index of the thin films is similar to that of a KNSBN:61 single bulk crystal. The birefringent shift as a function of the applied voltage of the thin films on fused silica has been measured, and the quadratic electro optic coefficient R has been derived to be $0.4\times 10^{-16}$(m/V)2 at 6328 Å.
- 2007-03-15
著者
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Wong Kin
Department Of Applied Physics And Materials Research Center The Hong Kong Polytechnic University
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Zhang Yueli
State Key Laboratory Of Optoelectronic Materials And Technologies/school Of Physics And Engineering
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Wang Biao
State Key Laboratory For Modification Of Chemical Fiber And Polymers College Of Material Science And
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Wong Kin
Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Hong Kong Special Administrative Region, People's Republic of China
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Tao Keyu
State Key Laboratory of Optoelectronic Materials and Technologies/School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
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Ma Ying
School of Physics and Electronic Engineering, Guangzhou University, Guangzhou 510006, People's Republic of China
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Yang Shenghong
State Key Laboratory of Optoelectronic Materials and Technologies/School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
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Mak Chee
Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Hong Kong Special Administrative Region, People's Republic of China
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Mak Chee
Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Hong Kong Special Administrative Region, People's Republic of China
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Ma Ying
School of Physics and Electronic Engineering, Guangzhou University, Guangzhou 510006, People's Republic of China
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Yang Shenghong
State Key Laboratory of Optoelectronic Materials and Technologies/School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
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Wang Biao
State Key Laboratory of Optoelectronic Materials and Technologies/School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
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Tao Keyu
State Key Laboratory of Optoelectronic Materials and Technologies/School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
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