Properties of Gated Single Free-Standing Carbon Nanotube with Multiple Growth Sequence

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概要

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• In this paper, we discuss an approach to fabricating a carbon nanotubes (CNTs) gate electrode structure for cold cathode emitter applications. The field emission behavior of the structure was studied by using single vertically aligned free-standing CNTs of various lengths and gate electrodes of various sizes to determine the optimal emission structure. A single CNT electrode source with a gate electrode was fabricated by combining optical lithography, electron-beam lithography (EBL), and inductively coupled plasma chemical vapor deposition (ICP-CVD). A single mask was adopted to define the gated structure and nano sized catalyst for CNT growth. A vertically aligned CNT was then grown within the gate hole by ICP-CVD. The CNT height inside the gate could be lengthened by multiple growth processes without affecting the field emission capability. The best turn-on fields, defined as the field required to generate an emission current of 1 nA, were approximately 1.66 and 1.38 V/μm, respectively. The turn-on field emission current saturated when the CNT length was about the same as the gate height.

• 2007-10-15

著者

• Peng Wen

  Mechanical and Systems Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 300, R.O.C.

• Tseng Shih

  Nano Technology Research Center, Industrial Technology Research Institute, Hsinchu, Taiwan 300, R.O.C.

• Yao Bin

  Center for Measurement Standards, Industrial Technology Research Institute, Hsinchu, Taiwan 300, R.O.C.

• Tsai Chuen

  Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C.

• Li Chia-Hung

  Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan 300, R.O.C.

• Tsai Ching

  Department of Nanomechanics, Tohoku University, Sendai 980-8579, Japan

• Chen Shih-Pu

  Advanced Energy Technology Laboratory, Industrial Technology Research Institute, Hsinchu, Taiwan 300, R.O.C.

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