Instability of Integrated Shift Register Circuits Using Hydrogenated Amorphous Silicon Thin Film Transistors
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概要
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The instability of integrated shift register circuits using hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) has been studied. The disturbance of low-level output voltage is calculated by modeling a generic shift register as a continuum, in which voltage fluctuations are generated by capacitive coupling with clock pulses and propagate with damping. The characteristics of the measured clamping voltage, signifying the failure of a circuit, show good agreement with those obtained using the model. The malfunction of an a-Si:H shift register is caused by the abnormal increase in the off-state voltage because of the accumulation of propagated voltage fluctuations originating at retarded times, and the bias stress during operation increases the instability by weakening damping.
- 2006-09-15