New Electron Beam Proximity Effects Correction Approach for 45 and 32 nm Nodes

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After the successful results obtained these last years, electron beam direct write (EBDW) lithography use for integrated circuit manufacturing has now been demonstrated. However, throughput and resolution capabilities need to be improved to push its interest for fast cycle production and advanced research and development applications. In this way, the process development needs good patterns dimensional accuracy, i.e., a better control of the proximity effects caused by back scattering electrons and others phenomenon. It exists several methods to provide a correction for these effects and the most commonly used is based on dose modulation. However it has been observed that this correction is not perfect and can significantly fail to accurately correct the smallest and most dense structures encountered in sub 65 nm design features. To continue reducing feature sizes a method to provide a complementary correction to the dose modulation solution is proposed. Based upon detailed characterization of the observed effects a rules correction scheme has been developed not dissimilar to the rule based corrections used in optical proximity correction (OPC). This rule based electron beam proximity correction, or R-EBPC, provides good results down to 40 nm, with improvements in critical dimension (CD) linearity, the isolated dense bias, line end shortening and the energy latitude. All of which leads to an improvement in the overall accuracy of the design, and furthermore an improvement in the process window.
2006-08-15

New Electron Beam Proximity Effects Correction Approach for 45 and 32 nm Nodes

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