Experimental Investigation of Intracavity Absorber Low Temperature GaAs in Diode-Pumped Nd:GdVO4 Laser
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概要
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A passively Q-switched and mode-locked diode-pumped Nd:GdVO4 laser was demonstrated using a low-temperature-grown GaAs wafer (LT-GaAs) as an intracavity saturable absorber. The maximal Q-switched mode-locked average output power was 750 mW with the Q-switched envelop having a repetition rate of 167 kHz. The mode-locked pulse trains inside the Q-switched pulse envelope had a repetition rate of ${\sim}790$ MHz.
- 2006-08-15
著者
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Liu Jie
College Of Chemical Engineering Qingdao University Of Science & Technology
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Wang Yonggang
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100022, China
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Liu Jie
College of Physics and Electronics, Shandong Normal University, Jinan 250014, China
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Tian Wenmiao
College of Physics and Electronics, Shandong Normal University, Jinan 250014, China
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Wang Chunxing
College of Physics and Electronics, Shandong Normal University, Jinan 250014, China
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Liu Shihua
College of Physics and Electronics, Shandong Normal University, Jinan 250014, China
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Wang Guanggang
College of Physics and Electronics, Shandong Normal University, Jinan 250014, China
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- Experimental Investigation of Intracavity Absorber Low Temperature GaAs in Diode-Pumped Nd:GdVO4 Laser