A Theoretical Analysis of Electromigration Failure in Aluminum Interconnections

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概要

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• Electromigration was analyzed mathematically by solving Huntington’s equation. A general solution assuming steady-state conditions was derived by Fourier transformation and complex integration. The analysis revealed that a significant accumulation of atoms at the anode induced hillock formation, and that atomic depletion at the cathode induced void formation. An electromigration acceleration test was performed to observe void formation using Al–0.5%Cu–1.0%Si on a SiO2/Si substrate. Experimental results of in situ observation were in good agreement with the theoretical result. The effect of a local stress field on void formation is discussed.

• 2006-07-15

著者

• Yokobori Jr.

  Graduate School of Engineering, Tohoku University

• Nemoto Takenao

  Graduate School of Engineering, Tohoku University, Aoba01, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Murakawa Tsutomu

  Graduate School of Engineering, Tohoku University, Aoba01, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Yokobori A.

  Graduate School of Engineering, Tohoku University, Aoba01, Aramaki, Aoba-ku, Sendai 980-8579, Japan

関連論文

• Effects of Alloying Additions and Material Microstructure on the Accuracy of the Predictive Law of Creep Crack Growth for W-Strengthened 9-12%Cr Ferritic Heat-Resistant Steel
• Numerical Analysis of Vacancy Transport by Residual Stress in Electromigration on LSI Interconnects
• A Theoretical Analysis of Electromigration Failure in Aluminum Interconnections
• Behavior of Branch Cracking and the Microstructural Strengthening Mechanism of Polycrystalline Ni-Base Superalloy, IN100 under Creep Condition

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