Broad-Band Superluminescent Light Emitting Diodes Incorporating Quantum Dots in Compositionally Modulated Quantum Wells
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概要
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We demonstrate a technique for tailoring the emission bandwidth of ${\sim}1.3$ μm quantum dot superluminescent light emitting diodes. A broadening of the emission is achieved by incorporating the InAs quantum dot layers in InGaAs quantum wells of different indium compositions. These structures exhibit a broader and flatter emission compared to a simple dot-in well structure comprised of wells of identical indium composition.
- 2006-04-15
著者
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Ray S.
Epsrc National Centre For Iii-v Technologies Department Of Electronic And Electrical Engineering Uni
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Groom K.
Epsrc National Centre For Iii-v Technologies Department Of Electronic And Electrical Engineering Uni
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LIU H.
EPSRC National Centre for III-V Technologies, Department of Electronic and Electrical Engineering, U
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Hopkinson M.
Epsrc National Centre For Iii-v Technologies Department Of Electronic And Electrical Engineering Uni
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Hogg R.
EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield, S1 3JD, U.K.
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Ray S.
EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield, S1 3JD, U.K.
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Groom K.
EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield, S1 3JD, U.K.
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Hopkinson M.
EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield, S1 3JD, U.K.
関連論文
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- Broad-Band Superluminescent Light Emitting Diodes Incorporating Quantum Dots in Compositionally Modulated Quantum Wells