Site-Control of InAs Quantum Dots using Ex-Situ Electron-Beam Lithographic Patterning of GaAs Substrates
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概要
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Conventional e-beam lithography followed by either dry or wet etching of small holes in GaAs substrates has been used to control the position of InAs self-assembled quantum dots. The dependence of hole occupancy on both hole area and hole depth has been investigated. We show a range of hole sizes where greater than 30% of sites contain a single dot with up to 60% single dot occupancy seen for dry-etched holes ${\sim}60$ nm wide, ${\sim}35$ nm deep and for wet-etched holes ${\sim}90$ nm wide, ${\sim}20$ nm deep. Single dot luminescence from these placed dots is demonstrated despite only a 10 nm GaAs buffer between dots and regrowth interface.
- 2006-04-15
著者
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Atkinson P.
Semiconductor Physics group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, U.K.
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Jones G.
Semiconductor Physics group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, U.K.
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Ward M.
Toshiba Research Europe Ltd., Cambridge Research Laboratory, 260 Science Park, Milton Road, Cambridge, CB4 0WE, U.K.
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Anderson D.
Semiconductor Physics group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, U.K.
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Shields A.
Toshiba Research Europe Ltd., Cambridge Research Laboratory, 260 Science Park, Milton Road, Cambridge, CB4 0WE, U.K.
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Ritchie D.
Semiconductor Physics group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, U.K.
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Bremner S.
Semiconductor Physics group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, U.K.
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Farrow T.
Toshiba Research Europe Ltd., Cambridge Research Laboratory, 260 Science Park, Milton Road, Cambridge, CB4 0WE, U.K.