Buffer-Enhanced Electrical-Pulse-Induced Resistive Memory Effect in Thin Film Perovskites

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概要

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• A multilayer perovskite thin-film resistive memory device composed of a Pr0.7Ca0.3MnO3 (PCMO) perovskite oxide epitaxial layer on a YBa2Cu3O7-δ (YBCO) thin-film bottom electrode, a thin yttria-stabilized zirconia (YSZ) buffer layer grown on the PCMO layer, and a gold thin-film top electrode has been developed. With the addition of the YSZ buffer layer, the pulse voltage needed to switch the device is significantly reduced and the resistance-switching ratio is increased compared to a non buffered resistive memory device, which is very important for device fabrication. The magnetic field effect on the multilayer structure resistance at various temperatures shows colossal magnetoresistance (CMR) behavior for both high and low resistance states, implying a bulk material component in the switch behavior. The multilayer thin-film lattice structure has been further characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM) analyses, which indicate a high-quality heterostructure. Current imaging atomic force microscopy (I-AFM) analysis indicated nanogranular conductivity distributed uniformly throughout the PCMO film surface.

• 2006-03-15

著者

• IGNATIEV Alex

  Texas Center for Superconductivity and Space Vacuum Epitaxy Center, University of Houston

• ZHANG Yue

  Key Laboratory of Aerospace Materials and Performance (Ministry of Education), School of Materials S

• Wu Naijuan

  Texas Center for Advanced Materials, University of Houston, Houston, TX 77204, U.S.A.

• Chen Xin

  Texas Center for Advanced Materials, University of Houston, Houston, TX 77204, U.S.A.

• Chen Qing

  Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, P. R. China

• Ignatiev Alex

  Texas Center for Advanced Materials, University of Houston, Houston, TX 77204, U.S.A.

• Zhang Yue

  Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, P. R. China

関連論文

• Heterostructures of Pb(Zr_xTi_)O_3 and YBa_2Cu_3O_ on MgO Substrate Prepared by Pulsed Laser Ablation
• Synthesis of bundle-like CeO2 nanofibers and their sub-microstructures
• Investigation of Optical and Electrical Properties of Pb(Zr1-xTix)O3 Thin Films on Different Substrates
• Buffer-Enhanced Electrical-Pulse-Induced Resistive Memory Effect in Thin Film Perovskites

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