Near-Field Photoluminescence Study of InAs/AlGaAs Quantum-Dot-Based Nanoclusters: Band-Filling Effect
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概要
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We performed near-field spectroscopy and microscopy of InAs/AlGaAs quantum-dot-based nanoclusters and observed the blueshift (up to 20 meV) of the photoluminescence spectra as the power density is increased. In particular, we observed a gradual change in the dominant luminescence energies of a nanocluster in real space from a lower energy state (1.4150 eV) to a higher energy state (1.4392 eV) with increasing excitation power, which is indicative of the band-filling effect of semiconductor nanostructures.
- 2006-02-15
著者
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Jhe Wonho
Center For Near-field Atom-photon Technology Seoul National University:department Of Physics Seoul N
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Jeon Heonsu
School Of Physics Seoul National University
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Hong Mun-Heon
Center for Near-field Atom-photon Technology and School of Physics, Seoul National University, Seoul 151-747, Korea
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Noh Haneol
Center for Near-field Atom-photon Technology and School of Physics, Seoul National University, Seoul 151-747, Korea
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Yu Young-Jun
Center for Near-field Atom-photon Technology and School of Physics, Seoul National University, Seoul 151-747, Korea
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Jeong In-Taek
School of Physics, Seoul National University, Seoul 151-747, Korea
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Woo Jong-Chun
School of Physics, Seoul National University, Seoul 151-747, Korea
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Park Yeonsang
School of Physics, Seoul National University, Seoul 151-747, Korea
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Park Yeonsang
School of Physics and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-747, Korea
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Jeon Heonsu
School of Physics and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-747, Korea
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Jhe Wonho
Center for Near-field Atom-photon Technology and School of Physics, Seoul National University, Seoul 151-747, Korea
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