Comprehensive Solution for Ultrathin Oxide Reliability Projections Including Novel Explanation for Power-Law Exponent Variations

概要

論文の詳細を見る
In this paper, we propose a comprehensive analysis of ultrathin oxide reliability that includes the validation of the power law model ($T_{\text{BD}}\sim V^{-n}$), area scaling ($T_{\text{BD}}\sim A^{-1/\beta}$), and process optimization. We show that the power law exponent $n$ ($=38$) of a pFET is less than that of a nFET ($n=48$). Then a proper area range for $ \beta $ determination and process optimization for n improvement are pointed out, especially for pFETs. A novel explanation is discussed of ultrathin oxide pFET degradation behavior with lower decoupled plasma nitridation (DPN) pressure or higher substrate bias stress ($V_{\text{bs}}>0$ V) that lowers the exponent in power-law fitting. This phenomenon shortens the lifetime predicted for ultrathin oxide pFETs. From the view of reliability projections, a new failure criterion is suggested with and further extended to 65 nm technology and to higher operating voltage applications.
2006-01-15