Shrinkage Process with Cure and Bake

概要

論文の詳細を見る
Electron beam (EB) and ultraviolet (UV) have a curing effect on resist patterns. We found that high-temperature baking can shrink patterns cured using EB or vacuum ultraviolet (VUV). Critical dimension (CD) measurements were performed after baking. It was found that CD decreased with increasing baking temperature and the CD deviation after the postcure baking was almost the same as that of the initial pattern. Sub-100 nm line patterns were successfully fabricated by shrinking about 35 nm upon 350 °C postcure bake without pattern reflow. It was demonstrated that the CD shrinkage process has a high CD controllability due to the low dependence of shrinkage on baking temperature and the nondependence of shrinkage on pattern pitch, and the process does not influence CD deviation.
2006-10-15