Growth, Optical and Structural Characterization of Layered GaS Films Prepared by Reactive RF Sputtering Method

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概要

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• Good-crystallinity gallium sulfide (GaS) films were prepared on silica glass substrates by RF reactive magnetron sputtering with an Ar and H2 gas mixture with various hydrogen fractions ($H_{\text{mf}}=0.1--0.4$). The structure and optical properties of the sputtered GaS films were studied. The X-ray diffraction measurements showed that GaS films deposited at 500°C using Ar as the sputtering gas ($H_{\text{mf}}=0$) had amorphous structures, while those using $H_{\text{mf}}=0.4$ had polycrystalline structures with the $c$-axis perpendicular to the substrate plane. The absorption edges of the polycrystalline GaS films showed a direct allowed transition with an optical gap of $E_{\text{og}}=3.0$ eV, which was in good agreement with those measured in single-crystal GaS by previous researchers.

• 2005-07-15

著者

• Ito Hiroshi

  Tokyo women's Medical College

• Takeuchi Manabu

  Faculty Of Engineering Ibaraki Univ.

• Ohyama Masanori

  Tokyo National College Of Technology

• Ohyama Masanori

  Tokyo National College of Technology, Department of Electrical Engineering, 1220-2 Kunugida-machi, Hachioji, Tokyo 192-0997, Japan

• Takeuchi Manabu

  Faculty of Engineering, Ibaraki University, 4-12-1 Nakanarusawa, Hitachi, Ibaraki 316-8511, Japan

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