Output Characteristics of a Dual-Wavelength Semiconductor Laser Beam in Master-Oscillator Power-Amplifier Configuration
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概要
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Two single-frequency laser beams at 852 nm were injected into a semiconductor tapered amplifier to generate a dual-wavelength laser beam. When the frequency difference $\delta$ between the two injection beams was less than ${\sim}2$ GHz, several sidebands appeared in the output due to the beating of the two injection frequencies. The efficiency of sideband generation was measured as a function of injection power. The total output power was measured as a function of $\delta$. We showed that the loss of the total output power, which is always accompanied by sideband generation, is one of the noteworthy characteristics of the dual-wavelength beam in a master-oscillator power-amplifier configuration.
- 2005-06-15
著者
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Cha Byung
Laboratory For Quantum Optics Korea Atomic Energy Research Institute
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Song Kyuseok
Laboratory For Quantum Optics Korea Atomic Energy Research Institute
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Jung Euo
Laboratory For Quantum Optics Korea Atomic Energy Research Institute
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Lim Gwon
Laboratory For Quantum Optics Korea Atomic Energy Research Institute
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Jung Euo
Laboratory for Quantum Optics, Korea Atomic Energy Research Institute, P.O. Box 105, Yusong, Taejon 305-600, Korea
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Park Seong
Laboratory for Quantum Optics, Korea Atomic Energy Research Institute, P.O. Box 105, Yusong, Taejon 305-600, Korea
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