Characterization of SiOx/Si/SiOx Coated n-InP Facets of Semiconductor Lasers Using Spatially-Resolved Photoluminescence

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概要

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• Maps of the room temperature photoluminescence (PL) yield from SiOx/Si/SiOx coated semiconductor laser facets were made during the course of accelerated lifetesting. A localized degradation of the PL yield was detected under the active region after aging, which signifies a localized decrease of the radiative recombination efficiency. The surface reflectance was also investigated and was found to be uncorrelated with the localized degradation of the PL yield.

• 2005-11-15

著者

• Lam S.

  MDA, 9445 Airport Rd., Brampton, Ontario L6S 4J3, Canada

• Cassidy Daniel

  Department of Engineering Physics, McMaster University, 1280 Main St. W., Hamilton, Ontario L8S 4L7, Canada

• Mallard R.

  Bookham, Inc., 10 Brewer Hunt Way, Kanata, Ottawa, Ontario K2K 2B5, Canada

関連論文

• Characterization of SiOx/Si/SiOx Coated n-InP Facets of Semiconductor Lasers Using Spatially-Resolved Photoluminescence

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