Electrical Field Analysis of Nanoscale Field Effect Transistors

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Numerical simulations have been performed to analyze the electric field inside nanoscale field effect transistors with channel lengths $L_{\text{ch}}$ of 2 and 4 nm. Our electrostatic analyses characterize the electric field distribution inside the device structure when the ratio of dielectric thickness $T_{\text{ox}}$ to $L_{\text{ch}}$ ($T_{\text{ox}}/L_{\text{ch}}$) ranges from 0.2 to 50. At constant drain voltage, the relationship between the gate voltage $V_{\text{g}}$ and $T_{\text{ox}}/L_{\text{ch}}$ in the field distribution was investigated. Near the interface, the field intensity changes significantly and depends on $V_{\text{g}}$, $T_{\text{ox}}/L_{\text{ch}}$ and on the distance from the interface. $V_{\text{g}}$ has a strong effect on channel field for a small $T_{\text{ox}}/L_{\text{ch}}$ (0.2–0.66). This effect decreases but remains significant when $T_{\text{ox}}/L_{\text{ch}}$ increases in the range of 0.66–5. On the other hand, for $T_{\text{ox}}/L_{\text{ch}}$ on the order of 5, $V_{\text{g}}$ has a limited impact on the channel field and becomes negligible as $T_{\text{ox}}/L_{\text{ch}}$ increases up to 50. We confirmed Kagen et al.’s suggestion that the values of $T_{\text{ox}}$ and $L_{\text{ch}}$ need to be properly selected to obtain functional nanoscale field effect transistors. However, we found that the gating effect should be included in device models for much higher of $T_{\text{ox}}/L_{\text{ch}}$ values. Moreover, our results approximately corresponded to related work published by Damle et al.
2004-06-15

Electrical Field Analysis of Nanoscale Field Effect Transistors

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