Data Retention Improvement of Metal-Oxide-Nitride-Oxide-Semiconductor Memories Using Silicon-Tetrachloride-Based Silicon Nitride with Ultralow Si-H Bond Density

スポンサーリンク

概要

• 論文の詳細を見る

• We have improved the data retention of metal-oxide-nitride-oxide-semiconductor (MONOS) memories by reducing the Si-H bond density in silicon nitride. This marked improvement was achieved by depositing silicon nitride with NH3 and SiCl4 (silicon tetrachloride, STC), instead of with NH3 and the conventionally used SiCl2H2 (dichlorosilane, DCS). The Si-H bond density of the STC-based nitride was less than 1% that of the DCS-based nitride. We clarified that the improvement was due to the suppression of the leakage of trapped electrons through shallow traps which are related to Si-H bonds with an activation energy of 0.1–0.2 eV.

• 2004-04-15

著者

• Nomoto Kazumasa

  Atsugi Technology Center Sony Corporation Microsystems Network Company

• Asayama Goh

  Atsugi Thechnology Center, Sony Corporation Microsystems Network Company, 4-14-1 Asahi-cho Atsugi-shi, Kanagawa 243-0014, Japan

• Kobayashi Toshio

  Atsugi Thechnology Center, Sony Corporation Microsystems Network Company, 4-14-1 Asahi-cho Atsugi-shi, Kanagawa 243-0014, Japan

• Nomoto Kazumasa

  Atsugi Thechnology Center, Sony Corporation Microsystems Network Company, 4-14-1 Asahi-cho Atsugi-shi, Kanagawa 243-0014, Japan

関連論文

• Data Retention Improvement of Metal-Oxide-Nitride-Oxide-Semiconductor Memories Using Silicon-Tetrachloride-Based Silicon Nitride with Ultralow Si-H Bond Density

スポンサーリンク