Halo Ion Implantation Effect on Extension Profile Studied by Scanning Capacitance Microscopy Using All-Metal Probe under FM Control

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By using an all-metal probe under frequency modulation (FM) control, we developed a scanning capacitance microscope (FM-SCM), and applied it to a study of the halo ion implantation effect on two-dimensional (2D) extension profiles of cross-sectional $p$-channel metal-oxide-semiconductor field effect transistors. With the use of the all-metal probe under FM control, we attain sub-5-nm spatial resolution for the $p$-$n$ junction in the $\partial C/\partial V$ image. The built-in depletion layer presumed by the $\partial C/\partial V$ image is narrower for the higher dose sample. The composition images of $\partial C/\partial V$ and topography allow us to determine extension depth $X_{\text{J}}$ and extension-gate overlap length $X_{\text{OV}}$, both of which decrease with increase of the halo implant dose. Furthermore, the decrease of $X_{\text{OV}}$ is steeper than that of $X_{\text{J}}$, clearly implying the anisotoropic effect of halo ion implantation.
2004-04-15