A Novel Extremely Broadband Superluminescent Diode Based on Symmetric Graded Tensile-strained Bulk InGaAs
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概要
- 論文の詳細を見る
A novel broadband superluminescent diode (SLD), which has a symmetric graded tensile-strained bulk InGaAs active region, is developed. The symmetric-graded tensile-strained bulk InGaAs is achieved by changing the group III TMGa source flow only during its growth process by low-pressure metalorganic vapor-phase epitaxy (LP-MOVPE), in which the much different tensile strain is introduced simultaneously. At 200 mA injection current, the full width at half maximum (FWHM) of the emission spectrum of the SLD can be up to 122 nm, covering the range of 1508–1630 nm, and the output power is 11.5 mW.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-04-15
著者
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Zhu Hong-liang
The Center Of Optoelectronics Research & Development Institute Of Semiconductors Chinese Academy
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Zhao Ling-juan
The Center Of Optoelectronics Research & Development Institute Of Semiconductors Chinese Academy
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Ding Ying
The Center Of Optoelectronics Research & Development Institute Of Semiconductors Chinese Academy
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Liu Zhi-hong
The Center Of Optoelectronics Research & Development Institute Of Semiconductors Chinese Academy
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Zhang Rui-Ying
The Center of Optoelectronics Research & Development, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Wang Shu-Rong
The Center of Optoelectronics Research & Development, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Wang Lu-Feng
The Center of Optoelectronics Research & Development, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Wang Wei
The Center of Optoelectronics Research & Development, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Zhou Fan
The Center of Optoelectronics Research & Development, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Zhou Fan
The Center of Optoelectronics Research & Development, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Zhu Hong-Liang
The Center of Optoelectronics Research & Development, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Liu Zhi-Hong
The Center of Optoelectronics Research & Development, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Wang Wei
The Center of Optoelectronics Research & Development, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China