Improving Response Speed of Electrooptical Switch in Silicon-on-Insulator by Modifying Modulation Area Structure

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概要

• 論文の詳細を見る

• This paper reports on the simulation of two $2 \times 2$ electrooptical switches with different modulation area structures in silicon-on-insulator (SOI). A two-dimensional (2D) semiconductor device simulation tool PISCES-II has been used to analyze the dc and transient behaviors of the two devices. The modeling results show that the switch with an N+–I–P+–I–N+ modulation structure has a much faster response speed than the device with a P+–I–N+ modulation structure, although the former requires slightly stronger injection power.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2003-07-15

著者

• Yu Jinzhong

  State Key Laboratory On Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China

• Yan Qingfeng

  State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China

関連論文

• $1\times 8$ Cascaded Multimode Interference Splitter in Silicon-On-Insulator
• Improving Response Speed of Electrooptical Switch in Silicon-on-Insulator by Modifying Modulation Area Structure

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