Electronic, Structural and Optical properties of AlAs/GaP Strained Short-period Superlattices

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概要

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• We carried out first-principles calculation of (AlAs)m/(GaP)n superlattices (SLs) ($m=n$: $1\leq n\leq 5$, $m+n=3$, $m+n=5$) using the full-potential linearized augmented plane-wave (FLAPW) method. The SLs are assumed to grow epitaxially on (001) GaAs and GaAsP substrates. In the case of $m+n=5$ [$(1,4)$, $(2,3)$, $(3,2)$] on (001) GaAs and [$(1,4)$ $(2,3)$] on GaAsP, superlattices are direct band gap semiconductors, although all the $m=n$ and $m+n=3$ superlattices are indirect band gap semiconductors. The squares of vertical transition matrix elements at the $\Gamma$ point of (AlAs)m/(GaP)n are two orders of magnitude larger than those for (AlAs)m/(AlP)n, which are also combinations of indirect band gap semiconductors.

• 2003-07-15

著者

• Ohnuma Toshiharu

  Electrical Physics Department Komae Research Laboratory Central Research Institute Of Electric Power

• Nagano Masahiro

  Electrical Physics Department Komae Research Laboratory Central Research Institute Of Electric Power

• Nagano Masahiro

  Electrical Physics Department, Komae Research Laboratory, CRIEPI, Central Research Institute of Electric Power Industry, 2-11-1 Iwado Kita, Komaeshi, Tokyo 201-8511, Japan

• Ohnuma Toshiharu

  Electrical Physics Department, Komae Research Laboratory, CRIEPI, Central Research Institute of Electric Power Industry, 2-11-1 Iwado Kita, Komaeshi, Tokyo 201-8511, Japan

関連論文

• Indirect-to-Direct Transition of (AlAs)_n/(AlP)_n Strained Short-Period Superlattices
• Gas-Source Migration-Enhanced Epitaxial Growth of GaP, AlP and AlAs
• Gas-Source Migration-Enhanced Epitaxial Growth of AlAs/AlP Superlattices
• Electronic, Structural and Optical properties of AlAs/GaP Strained Short-period Superlattices

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