Highly Integrated Field Emitter Arrays Fabricated by Transfer Mold Technique

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概要

• 論文の詳細を見る

• Highly integrated field emitter arrays (FEAs) have been fabricated by the transfer mold technique to obtain highly uniform and stable field emission for highly efficient and reliable vacuum microelectronic devices. Transfer mold Mo FEAs containing 9,400,000 emitter tips with high emitter density of 7,840,000 tips/cm2 have demonstrated a low value of less than 0.7%. Highly uniform, and flickerless fluorescence has been observed in the entire area of the fluorescent screen corresponding to the FEAs. The principle of the vacuum microelectronic switching devices has been proposed and experimentally verified by applying a high anode voltage of $\pm 1$ kV, which will be capable of decreasing the size and the electric power loss of the high voltage electric power converters using conventional semiconductor devices such as light-triggered thyristors (LTT) and gate turn off thyristors (GTO) to less than 1/100 and 1/10, respectively.

• 2003-06-15

著者

• NAKAMOTO Masayuki

  Corporate R & D Center, Toshiba Corporation

• Fukuda Katsuyoshi

  Corporate R & D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

• Nakamoto Masayuki

  Corporate R & D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

関連論文

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• Highly Integrated Field Emitter Arrays Fabricated by Transfer Mold Technique

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