High-Speed and Uniform Self-Aligned InGaAs/InP HBTs for 40 Gb/s Fiber Optic Communications Applications

概要

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We have developed the InGaAs/InP heterojunction bipolar transistor (HBT) fabrication process technology, which is capable of producing multiplexer/demultiplexer-level ICs in high yield. A simple self-aligned process utilizing an overhung profile of an InGaAs emitter contact mesa enables narrow separation between the emitter contact mesa and base electrodes. With this fabrication process, we have obtained very high uniformity of HBT characteristics. The uniformity was evaluated by measuring HBT arrays consisting of two-dimensionally arranged $26\times 57$ (1,482) HBTs. The average DC current gain at a collector current density of $1.0\times 10^{5}$ A/cm2 is 37.8 and the standard deviation is only 4.7%. A current gain cut-off frequency, $f_{\text{T}}$, of 190 GHz and a maximum oscillation frequency, $f_{\text{max}}$, of 280 GHz at a collector current, $I_{\text{c}}$, of 17 mA were achieved with a $0.8\times 5.8$ μm2 emitter HBT. The uniformity of RF properties was also excellent. The average $f_{\text{T}}$ and $f_{\text{max}}$ of the HBTs with a $0.8\times 5.8$ μm2 emitter contact mesa at $I_{\text{c}}$ of 15 mA were 190 GHz and 256 GHz, and the standard deviations were 1.6% and 2.3%, respectively.
INSTITUTE OF PURE AND APPLIED PHYSICSの論文
2003-04-15