Mechanical Properties of Silicon Carbonitride Thin Films
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概要
- 論文の詳細を見る
Silicon carbonitride thin films were synthesized by reactive rf sputtering a silicon carbide target in nitrogen and argon atmosphere, or sputtering a silicon nitride target in methane and argon atmosphere, respectively. The Nanoindentation technique (Nanoindenter XP system with a continuous stiffness measurement technique) was employed to measure the hardness and elastic modulus of thin films. The effects of sputtering power on the mechanical properties are different for the two SiCN thin films. With increasing sputtering power, the hardness and the elastic modulus decrease for the former but increase for the latter. The tendency is similar to the evolution trend of Si–C bonds in SiCN materials. This reflects that Si–C bonds provide greater hardness for SiCN thin films than Si–N and C–N bonds.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-02-15
著者
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Hu Xingfang
R&D Center for Special Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, P. R. China
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Peng Xiaofeng
R&D Center for Special Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, P. R. China
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Hu Xingfang
R&D Center for Special Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, P. R. China
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Wang Wei
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P. R. China
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Song Lixin
R&D Center for Special Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, P. R. China
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Song Lixin
R&D Center for Special Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, P. R. China