Photomodulated Second-Harmonic Generation at Silicon-Silicon Oxide Interfaces: From Modeling to Application
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概要
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A photomodulation technique based on the nonlinear-optical process of second-harmonic generation (SHG) is developed for characterizing Si/SiO2 interfaces and silicon-based metal-oxide-semiconductor (MOS) structures. The mechanisms of photoinduced SHG are discussed and a quantitative model of the SHG response is formulated. A method of extracting parameters of the Si/SiO2 interface from in situ-photomodulated-SHG measurements is proposed. The accuracy of the technique for measuring parameters of silicon-based MOS structures is estimated.
- 2003-11-15
著者
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Aktsipetrov Oleg
Physics Department Moscow State University
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Downer Michael
Texas Material Institute University Of Texas Austin
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Nakabayashi Seiichiro
Department Of Chemistry Faculty Of Science Saitama University
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TANIMURA Nobuko
Department of Chemistry, Faculty of Science, Saitama University
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Mishina Elena
Moscow Institute Of Radioengineering Electronics And Automation Prosp
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Aktsipetrov Oleg
Physics Department, Moscow State University, Moscow 117899, Russia
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Tanimura Nobuko
Department of Chemistry, Faculty of Science, Saitama University, Saitama 338-8570, Japan
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Downer Michael
Texas Material Institute, University of Texas, Austin, Texas 78712-1081, USA
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Mishina Elena
Moscow Institute of Radioengineering, Electronics and Automation, prosp. Vernadskogo 78, Moscow 117454, Russia
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