High-Power 1.5 $\mu$m InGaAsP/InP Strained Quantum Wells Integrated Superluminescent Light Source with Tilted Structure
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概要
- 論文の詳細を見る
Based on our original idea about monolithic integration of the superluminescent diode (SLD) with a semiconductor optical amplifier (SOA), the axis of the current injection area was tilted. High superluminescent power (more than 200 mW) at 1.5 $\mu$m was obtained by optimizing the tilted device structure. No lasing mode was discovered within the range of measurement. In addition, it was discovered that the tilted integrated device had the function of lasing suppression, to some extent.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2001-06-15
著者
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Du Guotong
Electronic Engneering Department State Key Labotatory On Integrated Optoelectronics Jilin University
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Song Junfeng
Electronic Engneering Department State Key Labotatory On Integrated Optoelectronics Jilin University
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Wu Bin
Electronic Engneering Department State Key Labotatory On Integrated Optoelectronics Jilin University
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LIU Yang
Electronic Engneering Department, State Key Labotatory on Integrated Optoelectronics, Jilin Universi
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ZHANG Yuantao
Electronic Engneering Department, State Key Labotatory on Integrated Optoelectronics, Jilin Universi
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Sun Yingzhi
Institute Of Posts And Telecommunication Jilin University
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Qian Ying
Institute Of Posts And Telecommunication Jilin University
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Zeng Yuping
Electronic Engineering Department, State Key Laboratory on Integrated Optoelectronics, Jilin University, JieFang Rd 119, Changchun 130023, China
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Du Guotong
Electronic Engineering Department, State Key Laboratory on Integrated Optoelectronics, Jilin University, JieFang Rd 119, Changchun 130023, China
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Song Junfeng
Electronic Engineering Department, State Key Laboratory on Integrated Optoelectronics, Jilin University, JieFang Rd 119, Changchun 130023, China
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Zhang Yuantao
Electronic Engineering Department, State Key Laboratory on Integrated Optoelectronics, Jilin University, JieFang Rd 119, Changchun 130023, China
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Qian Ying
Institute of Posts and Telecommunication, Jilin University, Changchun 130012, China
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Wu Bin
Electronic Engineering Department, State Key Laboratory on Integrated Optoelectronics, Jilin University, JieFang Rd 119, Changchun 130023, China
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Liu Yang
Electronic Engineering Department, State Key Laboratory on Integrated Optoelectronics, Jilin University, JieFang Rd 119, Changchun 130023, China
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Sun Yingzhi
Institute of Posts and Telecommunication, Jilin University, Changchun 130012, China
関連論文
- High-Power 1.5 μm InGaAsP/InP Strained Quautum Wells Integrated Superluminescent Light Source with Tilted Structure
- High-Power 1.5 $\mu$m InGaAsP/InP Strained Quantum Wells Integrated Superluminescent Light Source with Tilted Structure