Temperature Dependence of Surface Potential in a-Si:H pH-Ion Sensitive Field Effect Transistor

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概要

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• In this study, we focus on the investigation of the relationship between the a-Si:H/SiO2 gate pH-ion sensitive field effect transistor (pH-ISFET) and the Al/a-Si:H/SiO2 gate metal-oxide-semiconductor field effect transistor (MOSFET). The a-Si:H thin film was deposited by plasma-enhanced chemical vapor deposition (PECVD). The thickness of the a-Si:H thin film was 1000 Å. The aluminum gate electrode was deposited by a thermal evaporation system. We use the Keithley 236 current–voltage ($I$–$V$) measurement system to measure the drain-source current ($I_{\text{DS}}$) versus gate voltage ($V_{\text{G}}$) curves for the pH-ISFET and MOSFET@. The surface potential of the a-Si:H sensing membrane can be calculated from the $I_{\text{DS}}$–$V_{\text{G}}$ curves of pH-ISFET and MOSFET@. That is, the semiconductor related terms of threshold voltage could be eliminated. Furthermore, we investigate the temperature dependence of the surface potential. From experimental results, we can observe that the pH sensitivity of the surface potential is increased with increasing temperature. We can also find the pHpzc (pH at the point of zero charge) of the a-Si:H pH-ISFET.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-06-15

著者

• WANG Yii

  Institute of Electronic and Information Engineering, National Yunlin University of Science and Techn

• Tsai Hsjian

  Institute Of Electronic And Information Engineering National Yunlin University Of Science And Techno

• Chou Jung

  Institute of Electronic and Information Engineering, National Yunlin University of Science and Technology, Touliu, Yunlin, Taiwan 640, R.O.C.

• Chou Jung

  Institute of Electronic and Information Engineering, National Yunlin University of Science & Technology, Touliu, Yunlin, Taiwan 640, R.O.C.

• Wang Yii

  Institute of Electronic and Information Engineering, National Yunlin University of Science and Technology, Touliu, Yunlin, Taiwan 640, R.O.C.

• Tsai Hsjian

  Institute of Electronic and Information Engineering, National Yunlin University of Science and Technology, Touliu, Yunlin, Taiwan 640, R.O.C.

関連論文

• Temperature Dependence of Surface Potential in a-Si:H pH-Ion Sensitive Field Effect Transistor
• Temperature Dependence of Surface Potential in a-Si:H pH-Ion Sensitive Field Effect Transistor
• Study of TiO2 Thin Films for Ion Sensitive Field Effect Transistor Application with RF Sputtering Deposition

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