Design and Optimization of Novel High Responsivity, Wideband Silicon Photodiode

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概要

• 論文の詳細を見る

• Various types of proposed photodiodes fabricated using a 0.25 $\mu$m complementary metal oxide semiconductor (CMOS) technology are presented. The effects of different design layouts on the performance are compared for a wide range of light intensity, photodiode current, dark current and diode capacitance. Frequency response of these devices are also characterized and compared for different bias conditions. A high responsivity photodiode having a 3 dB bandwidth of 9.4 GHz at a reverse bias voltage of 5 V is demonstrated. The results show that the proposed photodiodes outperform the best silicon photodiodes reported so far.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-04-30

著者

• Yeo Kiat

  School Of Electrical And Electronic Engineering Nanyang Technological University

• Swe Toe

  School Of Electrical And Electronic Engineering Nanyang Technological University

• Yeo Kiat

  School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798

• Chew Kok

  Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406

• Chu Sanford

  Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406

• Swe Toe

  School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798

関連論文

• A Novel High Responsivity, Wide Band Silicon Photodiode
• Design and Optimization of Novel High Responsivity, Wideband Silicon Photodiode

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