Electronic Structure, Stark Effect and Optical Properties of Multistacked Dots
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概要
- 論文の詳細を見る
We present the results of effective mass calculations for the electronic structure and optical properties of stacked quantum dots in the presence of a longitudinal electric field. Attention is focussed on strongly stacked dot structures, in which a vertical field acts on the electron in the same way as found in a quantum well. We have studied the dipole selection rules and oscillator strengths of stacked dots for intraband transitions (far-infrared absorption). In the case of interband transitions, we have studied the effect of a longitudinal electric field on the overlap between electron and hole wavefunctions. We have also calculated the absorption spectrum for structures of attached dots, taking into account Gaussian fluctuations in the vertical and lateral dimensions.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-03-30
著者
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Bastard Gerald
Laboratoire De Physique Ens
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VASANELLI Angela
Laboratoire de Physique ENS
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SAKAKI Hiroyuki
IIS, University of Tokyo
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Ferreira Robson
Laboratoire Pierre Aigrain Ecole Normale Superieure Cnrs (umr 8551) Universite P. Et M. Curie Univer
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Sakaki Hiroyuki
IIS, University of Tokyo, 5-7-10 Roppongi, Minato-ku, Tokyo 106-8558, Japan
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De Giorgi
INFM, Università di Lecce, via per Arnesano, I-73100 Lecce, Italy
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Cingolani Roberto
INFM, Università di Lecce, via per Arnesano, I-73100 Lecce, Italy
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Ferreira Robson
Laboratoire de Physique ENS, 24 rue Lhomond F-75005 Paris, France
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Vasanelli Angela
Laboratoire de Physique ENS, 24 rue Lhomond F-75005 Paris, France
関連論文
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