Effects of Annealing on Electrical Coupling in a Multilayer InAs/GaAs Quantum Dots System

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We present a systematic investigation of the capacitance–voltage measurements and Raman scattering on a multilayer InAs/GaAs self-assembled quantum dots system annealed at different temperatures. We observed a decrease of the electrical coupling of the electrons trapped in the dots located in the different layers. Raman scattering revealed the modifications of the dots morphology which influenced on the observed increase of the localization of electrons in the dots after the annealing process. We also observed that the annealing at 600$^\circ$C altered the plane of the dots into layers of an InxGa1-xAs alloy.
Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
2001-03-30